SAC3619BQ7

SAC3619BQ7

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X-Band FEM Chip 8.5GHz ~10.5 GHz

General Description

SAC3619BQ7 is a GaAs MMIC X-band front-end chip for 8.5 to 10.5 GHz, packing a T/R switch, limiter protected LNA and power amplifier into a 7 x 7 mm QFN. Receive gain is 22 dB with 1.8 dB NF; transmit gives 32 dBm at P-3dB with 21 dB small signal gain.

The PA runs from +6 V at 900 mA quiescent, receive from +5 V at 35 mA, and the switch driver needs -12 V. Switch isolation is 30 dB and PAE is about 30%, covering the T/R path behind each X-band radar element.

Feature

  • Frequency: 8.5GHz~10.5GHz
  • RX Gain: 22dB
  • RX Noise Figure: 1.8dB
  • TX P-3dB: 32dBm
  • Package: QFN7x7

Typical Applications X-Band Radar

Product Data Complete Data Sheet

ABSOLUTE MAXIMUM RATINGS

  • Drain Voltage +6.5 V
  • Drain Current (TX_VD) 1100 mA
  • Gate Voltage (TX_VD) -5 V to -.2 V
  • Gate Current (TX_IG) 10mA
  • Switch Driver Voltage (Vee) -7 V to -15 V
  • Switch Driver Voltage (Vdd) +5.5 V
  • Switch Control Voltage (Vc) +5.5 V
  • Switch Control Current (I_Vdd) 70 mA
  • Operating Temperature (Case) -55 °C to +150 °C
  • Storage Temperature -55 °C to +150 °C
  • ESD (HBM) Class 1A