SAC5020CR10

SAC5020CR10

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GaN IMFET 0.7GHz~6GHz 48dBm

General Description

SAC5020CR10 is a GaN IMFET (internally matched FET) for 0.7 to 6 GHz in a CR10 metal-ceramic package. It produces 48 dBm with 8 dB of large signal gain and 45% drain efficiency.

Bias is +28 V drain and negative gate, roughly 16 A at full output. Matching is built in, so the whole band works without external tuning, but the 8 dB gain means it wants a strong driver (input is rated to +44 dBm max). EMC test amplifiers and radar transmitters are the listed uses.

Feature

  • Frequency: 0.7GHz~6GHz
  • Large Signal Gain: 8dB
  • Output Power: 48dBm
  • DE: 45%
  • Package: Metal-Ceramic-Package (CR10)
  • Supply Voltage: +28V/-Vg

Typical Applications EMC
Radar

Product Data Complete Data Sheet

S Parameters

ABSOLUTE MAXIMUM RATINGS

  • Maximum Input Power +44dBm
  • Operating Temperature (TBASE) -55℃ ~ +85℃
  • Channel Temperature 230℃
  • Storage Temperature -55℃ ~ +180℃
  • Maximum VD +35V
  • VG Range -8V ~ -1V
  • Mounting Temperature 280℃, 30s