SAC2502Q3

GaAs Enhancement Mode pHEMT

General Description

SAC2502Q3 is a 0.25 µm GaAs enhancement-mode pHEMT with 800 µm gate width, housed in a plastic QFN package. Over 0.1 to 8 GHz it gives 21 dB of gain, a 0.8 dB noise figure, 17 dBm output P1dB and 33 dBm OIP3.

Bias is a single 3 V supply at 40 mA, and the package is 3 x 3 x 1.2 mm with 90 °C/W thermal resistance. Being surface mount, it drops straight onto a PCB as a discrete LNA or medium power stage for hybrid microwave circuits, radar/ECM and test equipment.

Also available as SAC2502.

Feature

Enhancement mode operation
800um gate width
High linearity performance
High output power and PAE
Low cost QFN3x3 package
Package Size: 3mm×3mm×1.2mm

Typical Applications Microwave HMIC
Test and Measurement
Radar and ECM

Product Data Complete Data Sheet

ABSOLUTE MAXIMUM RATINGS

Gate - Source Voltage(VGS) 0～+1.2V
Gate Drain Voltage(VGD) 12V
Drain Current(IDS) 170mA
Total Power Dissipation(Pdiss) 870mW
RF Input Power(Pin max) 13dBm
Gate Source Current(IGS) 2mA
Channel Temperature 150℃
Storage Temperature -60℃~150℃
Thermal Resistance 90℃/W