SAC2504

SAC2504

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GaAs pHEMT Low Noise Transistor

General Description

With a 150 µm gate width and 0.15 µm E-beam gate, SAC2504 is a GaAs pHEMT chip for amplifier work anywhere from 0.1 to 40 GHz. The data table gives 12 dB of gain and a 1.8 dB noise figure, plus 13 dBm P1dB and 22 dBm OIP3.

Operating bias is 2 V at 10 mA, with 200 °C/W thermal resistance. Bond pads are gold plated for thermocompression or thermosonic bonding, so the bare die wires directly into HMIC assemblies for radar, ECM or test gear, as either a low noise or medium power device.

Feature

Typical Applications Microwave HMIC
Test and Measurement
Radar and ECM

Product Data Complete Data Sheet

ABSOLUTE MAXIMUM RATINGS

  • Gate - Source Voltage(VGS) -1.2～-0.2V
  • Gate Drain Voltage(VGD) 12V
  • Drain Current(IDS) 10mA
  • Total Power Dissipation(Pdiss) 290mW
  • RF Input Power(Pin max) 13dBm
  • Gate Source Current(IGS) 2mA
  • Channel Temperature 150℃
  • Storage Temperature -60℃~150℃
  • Thermal Resistance 200℃/W