SAC3159
SAC3159
Get A QuoteGaN High Electron Mobility Transistor
General Description
SAC3159 is a 30-watt, unmatched gallium nitride (GaN) high electron mobility transistor (HEMT) which designed specifically with high efficiency, high gain and wide bandwidth capabilities with frequency up to 6000MHz. The transistor is supplied in a ceramic /metal flange package.
Feature
- High Efficiency and Linear Gain Operation
- Negative Gate Voltage and Bias Sequencing Required
- Excellent Thermal Stability and Excellent Ruggedness
- Metal Based Package Sealed with Ceramic-Epoxy Lid
- Gold Metallization System: Chip-Wire Bond-Package
Product Data Complete Data Sheet