SAC2501

SAC2501

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GaAs E-pHEMT Low Noise Transistor

General Description

SAC2501 is a high dynamic range, low noise, E-pHEMT transistor. SAC2501 is ideal for cellular/PCS base stations, MMDS, and other systems in the 450 MHz to 6 GHz frequency range.

Feature

  • Freq: 0.1~8GHz
  • Output IP3：33dBm
  • OutputP-1dB：18dBm
  • Gain：28dB
  • Noise Figure：0.5dB
  • Die Size：0.62 mm x0.45 mm x0.1mm

Typical Applications RF/ Microwave Radio
Test and Measurement
Fiber Optics
Radar and ECM

Product Data Complete Data Sheet

ABSOLUTE MAXIMUM RATINGS

  • Gate - Source Voltage(VGS) -5～1.2V
  • Gate Drain Voltage(VGD) 15V
  • Drain Current(IDS) 350mA
  • Total Power Dissipation(Pdiss) 1100mW
  • RF Input Power(Pin max) 17dBm
  • Gate Source Current(IGS) 2mA
  • Channel Temperature 150℃
  • Storage Temperature -60℃~125℃
  • Thermal Resistance TBD℃/W