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GaAs pHEMT Low Noise Transistor

General Description

SAC2503 is a 0.15μm E-beam gate GaAs Pseudomorphic High Electron Mobility Transistor chip (Wg=100μm), which has high associated gain and high dynamic range. The device can be used in circuits up to 40 GHz and suitable for low noise and medium power amplifier applications including a wide range of commercial and military applications. All bond pads are gold plated for either thermo-compression or thermo-sonic wire bonding.


Typical Applications Microwave HMIC
Test and Measurement
Radar and ECM

Product Data Complete Data Sheet


  • Gate - Source Voltage(VGS) -1.2~-0.2V
  • Gate Drain Voltage(VGD) 12V
  • Drain Current(IDS) 80mA
  • Total Power Dissipation(Pdiss) 270mW
  • RF Input Power(Pin max) 12dBm
  • Gate Source Current(IGS) 2mA
  • Channel Temperature 150℃
  • Storage Temperature -60℃~150℃
  • Thermal Resistance 200℃/W